| PART |
Description |
Maker |
| M59PW1282 M59PW12821 M59PW1282-100M1T M59PW1282120 |
128Mbit (two 64Mb, x16, Uniform Block, LightFlash?? 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash) 3V Supply, Multiple Memory Product
128Mbit (two 64Mb x16 Uniform Block LightFlash) 3V Supply Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash? 3V Supply, Multiple Memory Product
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0T7040T0 M36W0T7040T0ZAQT |
128Mbit (Multiple Bank, 8Mb x 16, Burst) Flash Memory 16Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S2816 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 |
64MB & 128MB SmartMediaTM Card 64MB
64MB & 128MB SmartMediaTM Card
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ASMB-784G4-00A1E |
LGA 1150 Intel? Xeon? E3 V3 ATX Server Board with 2 PCIe x16 slots (x8 link) or 1 PCIe x16 slot (x16 link), 3 PCI,USB 3.0, PCIe Gen III, Quad/Dual LANs
|
Advantech Co., Ltd.
|
| HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM
x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
| MB84VD23280EA MB84VD23280EA-90 MB84VD23280EA-90-PB |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM 64M号（x8/x16）闪
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HY62LF16406D-SF HY62LF16406D-SFI HY62LF16406D-DF H |
256Kx16bit full CMOS SRAM
x16 SRAM
x16|2.5V|70/85|Super Low Power Slow SRAM - 4M x16 | 2.5V的| 70/85 |超级低功耗SRAM的速度 4
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
